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 INTEGRATED CIRCUITS
DATA SHEET
CGY2021G DCS/PCS 2 W power amplifier
Preliminary specification Supersedes data of 1996 Oct 15 File under Integrated Circuits, IC17 1997 Apr 03
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
FEATURES * Power Amplifier (PA) overall efficiency 50% (DCS) * 34 dB gain * 0 dBm input power * Gain control range >50 dB * Integrated power sensor driver * Low output noise floor of PA <-121 dBm/Hz in DCS/PCS RX band * Wide operating temperature range -20 to +85 C * LQFP 48-pin package * Compatible with power ramping controller PCA5077 and GaAs PA power modulator UBA1710. APPLICATIONS * Hand-held transceivers for DCS/PCS applications (DCS: 1710 to 1785 MHz and PCS: 1850 to 1910 MHz) * 1800 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA SYMBOL VDD IDD Po(max) Tamb Note 1. For conditions, see Chapters "AC characteristics" and "DC characteristics". ORDERING INFORMATION TYPE NUMBER CGY2021G PACKAGE NAME LQFP48 DESCRIPTION plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm PARAMETER(1) positive supply voltage positive peak supply current maximum output power operating ambient temperature - - - -20 MIN. TYP. 4.5 1.4 34 - - - - +85 GENERAL DESCRIPTION
CGY2021G
The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply. The chip also includes a power sensor driver so that no directional coupler is required in the power control loop. The PA requires only a simple low-pass filter to comply with the DCS/PCS transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages.
MAX. V A
UNIT
dBm C
VERSION SOT313-2
1997 Apr 03
2
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
BLOCK DIAGRAM
CGY2021G
handbook, full pagewidth
VDD1 29
VDD2 33
VDD3 42 18 SENSOR DRIVER
DETO/VDD5
RFI
27
6,7,8
RFO/VDD4
(1)
31 VGG1
CGY2021G
19 VGG2
MGD771
GND
(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
Fig.1 Block diagram.
PINNING SYMBOL GND RFO/VDD4 GND DETO/VDD5 VGG2 GND RFI GND VDD1 GND VGG1 GND VDD2 GND VDD3 GND PIN 1 to 5 6 to 8 9 to 17 18 19 20 to 26 27 28 29 30 31 32 33 34 to 41 42 43 to 48 ground PA output and fourth stage supply voltage ground power sensor output and supply voltage third and fourth stage negative gate supply voltage ground PA input ground first stage supply voltage ground first and second stage negative gate supply voltage ground second stage supply voltage ground third stage supply voltage ground DESCRIPTION
1997 Apr 03
3
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
CGY2021G
46 GND
38 GND
41 GND
45 GND
40 GND
39 GND
48 GND
37 GND
44 GND
43 GND
47 GND
handbook, full pagewidth
42 VDD3
GND GND GND GND GND RFO/VDD4 RFO/VDD4 RFO/VDD4 GND
1 2 3 4 5 6 7 8 9
36 GND 35 GND 34 GND 33 VDD2 32 GND 31 VGG1
CGY2021G
30 GND 29 VDD1 28 GND 27 RFI 26 GND 25 GND
GND 10 GND 11 GND 12
DETO/VDD5 18
VGG2 19
GND 22
GND 17
GND 24
GND 14
GND 16
GND 21
GND 13
GND 15
GND 20
GND 23
MGD770
Fig.2 Pin configuration.
1997 Apr 03
4
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
FUNCTIONAL DESCRIPTION Operating conditions The CGY2021G is designed to meet the European Telecommunications Standards Institute (ETSI) DCS documents, the ETS 300 577 specification, which are defined as follows: * ton = 542.8 s * T = 4.3 ms * Duty cycle = 1/8. This amplifier is specifically designed for pulse operation allowing the use of a LQFP48 plastic package. Power amplifier The Power Amplifier (PA) consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply.
CGY2021G
The amplifier bias is set by using a negative voltage applied at pins VGG1 and VGG2. This negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress of the amplifier. Power sensor driver The power sensor driver is a buffer amplifier that delivers an output signal at the DETO pin which is proportional to the amplifier power. This signal can be detected by external diodes for power control purpose. As the sensor signal is taken from the input of the last stage of the PA, it is isolated from disturbances at the output by the reverse isolation of the PA output stage. An impedance mismatch at the PA output therefore does not significantly influence the signal delivered by the power sensor as this normally occurs when power sense is made using a directional coupler. Consequently, the cost and space of using a directional coupler are saved.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL VDD VGG Tj(max) Tstg Ptot positive supply voltage negative supply voltage maximum operating junction temperature IC storage temperature total power dissipation PARAMETER - - - - - MIN. 7 -10 150 150 1.3 MAX. V V C C W UNIT
THERMAL CHARACTERISTICS General operating conditions applied. SYMBOL Rth j-c Note 1. This thermal resistance is a typical value and is measured under DCS/PCS pulse conditions. PARAMETER thermal resistance from junction to case; note 1 VALUE 45 UNIT K/W
1997 Apr 03
5
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
CGY2021G
DC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 C; peak current values during burst; general operating conditions applied; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD IDD positive supply voltage positive peak supply current - - - - - 4.5 1.4 -1.6 -1.6 - - - - - 2 V A
Pins VGG1 and VGG2 VGG1 VGG2 IGG1 + IGG2 Note 1. The negative bias VGG must be applied 10 s before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. negative supply voltage negative supply voltage negative peak supply current note 1 note 1 V V mA
1997 Apr 03
6
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
AC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 C; general operating conditions applied; unless otherwise specified. Measured and guaranteed on CGY2021G evaluation board. SYMBOL Power amplifier Pi S11 fRF Po(max) RS CS Po(off) NRX H2 H3 Stab input power input return loss RF frequency range maximum output power efficiency optimum series load resistance optimum series load capacitance isolation output noise in RX band 2nd harmonic level 3rd harmonic level stability note 2 RL = 100 ; relative to PA output power into 50 load PA OFF; Pi = 0 dBm 50 source; note 1 DCS PCS Tamb = 25 C; VDD = 4.5 V Tamb = -20 to +85 C; VDD = 4.2 V DCS; at Po(max) PCS; at Po(max) -2 - 1710 1850 33 31 40 - - - - - - - - - - - - - 34 - 50 47 6 11 -50 - -40 -35 - -25 PARAMETER CONDITIONS MIN. TYP.
CGY2021G
MAX.
UNIT
+2 -10 1785 1910 - - - - - - - -121 - - -50 -
dBm dB MHz MHz dBm dBm % % pF dBm dBm/Hz dBc dBc dBc
Power sensor driver Po(DET) Notes 1. Including the 82 resistor connected in parallel at the power amplifier input on the evaluation board. 2. The device is adjusted to provide nominal value of load power into a 50 load. The device is switched off and a 6 : 1 load replaces the 50 load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. sensor driver output power dBc
1997 Apr 03
7
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
APPLICATION INFORMATION
CGY2021G
handbook, full pagewidth
10 pF 48 47 46 45 44 43 42 41 40 39 38 37 1 2 3 4 5 6 VDD2 VDD3 36 35 34 33 32 10 pF 47 1 nF 22 pF 1 nF VGG -1.6 V
PA output
7 C1(3) C2(3) C3(3) 8 9 10 11 12
CGY2021G
RFO/VDD4
VGG1 31 30 VDD1 29 28 RFI 27 26 25
100 pF TRL2 (2) 82 PA input
DETO VGG2 13 14 15 16 17 18 19 20 21 22 23 24 TRL1(1) 10 pF 12 pF 6 nH 1.5 pF
12 pF 39 180 Vcontrol 0.8 to 3 V BSR14 VDD PHP109 560 1 k Vdiode 10 nF
100
MGD772
1 k BAS70 1 k
-90 A
DC output BAS70 1 nF 39 pF
Vbat 3.6 V
1.25 V
All capacitors are type: SMD0603. Thickness: 0.8 mm; substrate: FR4; r = 4.7. (1) TRL1: width = 0.3 mm; length = 16 mm. (2) TRL2: width = 0.5 mm; length = 10 mm. (3) the component values are: SYSTEM DCS PCS C1 (pF) 2.2 1.5 C2 (pF) 1.8 1.8 1.5 C3 (pF) 2.2 1.2 2.2
Fig.3 Evaluation board schematic.
1997 Apr 03
8
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
CGY2021G
SOT313-2
c
y X
36 37
25 24 ZE
A
e
Q E HE A A2 A1 (A 3) Lp L detail X
wM pin 1 index 48 1 12 ZD bp D HD wM B vM B vM A 13 bp
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT313-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A max. 1.60 A1 0.20 0.05 A2 1.45 1.35 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 7.1 6.9 E (1) 7.1 6.9 e 0.5 HD 9.15 8.85 HE 9.15 8.85 L 1.0 Lp 0.75 0.45 Q 0.69 0.59 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
ISSUE DATE 93-06-15 94-12-19
1997 Apr 03
9
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
CGY2021G
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Apr 03
10
Philips Semiconductors
Preliminary specification
DCS/PCS 2 W power amplifier
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
CGY2021G
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Apr 03
11
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
437027/1200/02/pp12
Date of release: 1997 Apr 03
Document order number:
9397 750 02022


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